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Bipolar Junction Transistor

  • Stephan J. G. Gift
  • Brent Maundy
Chapter
  • 17 Downloads

Abstract

The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H. Brattain, John Bardeen and William Shockley who were awarded the Nobel Prize in Physics in 1956 for this invention. It revolutionized the electronics industry by enabling miniaturization of electronic circuits and increased equipment portability. This chapter discusses the characteristics of the BJT and its use in elementary amplifier circuits. At the end of it, the student will be able to:

Supplementary material

Bibliography

  1. R.L. Boylestad, L. Nashelsky, Electronic Devices and Circuit Theory, 11th edn. (Pearson Education, New Jersey, 2013)
  2. J. Millman, C.C. Halkias, Integrated Electronics: Analog and Digital Circuits and Systems (Mc Graw Hill Book Company, New York, 1972)
  3. F.H. Mitchell, F.H. Mitchell, Introduction to Electronics Design (Prentice Hall of India, New Delhi, 1995)
  4. D.A. Neeman, Electronic Circuit Analysis and Design, 2nd edn. (McGraw Hill, New York, 2001)
  5. M. Yunik, The Design of Modern Transistor Circuits (Prentice Hall, New Jersey, 1973)

Copyright information

© Springer Nature Switzerland AG 2021

Authors and Affiliations

  • Stephan J. G. Gift
    • 1
  • Brent Maundy
    • 2
  1. 1.Electrical and Computer EngineeringThe University of the West Indies, St. Augustine CampusSt. AugustineTrinidad and Tobago
  2. 2.Electrical and Computer EngineeringUniversity of CalgaryCalgaryCanada

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