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Field-Effect Transistor

  • Stephan J. G. Gift
  • Brent Maundy
Chapter
  • 16 Downloads

Abstract

The field-effect transistor or FET is a three-terminal semiconductor device that controls an electric current by an electric field. The FET actually pre-dates the BJT as the first patent was granted for such a device in 1928. Its impact on industry however was felt only about a decade after the development of the transistor in 1948. The FET is a unipolar device having only one p-n junction, and it differs from the BJT in several important respects, the main one being the FET’s inherently high input impedance. There are two types of FETS: the junction gate FET (JFET or JUGFET) and the metal oxide semiconductor FET or MOSFET. The MOSFET, sometimes called the insulated gate FET or IGFET, itself comes in two versions: the depletion MOSFET and the enhancement MOSFET. Because of a difference in construction, the MOSFET has a higher input impedance than the JFET. The FET like the BJT can provide amplification of a signal and operate as a switch. It is important in many applications and forms the subject of this chapter. At the end of the chapter, the student will be able to:

Supplementary material

Bibliography

  1. R.L. Boylestad, L. Nashelsky, Electronic Devices and Circuit Theory, 11th edn. (Pearson Education, New Jersey, 2013)
  2. J. Eimbinder, FET Applications Handbook, 2nd edn. (Tab Books, Pasadena, 1970)
  3. F.G. Rayer, 50 (FET) Field Effect Transistor Projects (Babani Press, London, 1977)

Copyright information

© Springer Nature Switzerland AG 2021

Authors and Affiliations

  • Stephan J. G. Gift
    • 1
  • Brent Maundy
    • 2
  1. 1.Electrical and Computer EngineeringThe University of the West Indies, St. Augustine CampusSt. AugustineTrinidad and Tobago
  2. 2.Electrical and Computer EngineeringUniversity of CalgaryCalgaryCanada

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