BJT and FET Models

  • Stephan J. G. Gift
  • Brent Maundy


In Chaps.   and  , the BJT and FET were introduced and their operation discussed. The need for biasing was established and various biasing schemes presented. Also, the operation of the BJT and FET as amplifiers each in three configurations was discussed. While the methods utilized gave reasonably good answers, more precise design requires the use of BJT and FET models or equivalent circuits. The models we adopt are the hybrid parameter or h-parameter model and the y-parameter model. These transistor parameters can in general be obtained from manufacturer’s data sheets. At the end of this chapter, the student will be able to:

Supplementary material


  1. R.L. Boylestad, L. Nashelsky, Electronic Devices and Circuit Theory, 11th edn. (Pearson Education, New Jersey, 2013)
  2. M. Yunik, The Design of Modern Transistor Circuits (Prentice Hall, New Jersey, 1973)

Copyright information

© Springer Nature Switzerland AG 2021

Authors and Affiliations

  • Stephan J. G. Gift
    • 1
  • Brent Maundy
    • 2
  1. 1.Electrical and Computer EngineeringThe University of the West Indies, St. Augustine CampusSt. AugustineTrinidad and Tobago
  2. 2.Electrical and Computer EngineeringUniversity of CalgaryCalgaryCanada

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